View FDG410NZ_4661141.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDG410NZ Single N-Channel PowerTrench(R) MOSFET
March 2009
FDG410NZ
Single N-Channel PowerTrench(R) MOSFET
20 V, 2.2 A, 70 m Features
Max rDS(on) = 70 m at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 m at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 m at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 m at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Fast switching speed Low gate charge RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.
Applications
DC/DC converter Power management Load switch
D D
S D1 D2 G D D G3 4S 6D 5D
SC70-6
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 1a) (Note 1b) TA = 25 C (Note 1a) Ratings 20 8 2.2 6.0 0.42 0.38 -55 to +150 Units V V A W C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 300 333 C/W
Package Marking and Ordering Information
Device Marking .41 Device FDG410NZ Package SC70-6 Reel Size 7" Tape Width 8 mm Quantity 3000 units
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
1
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V 20 17 1 10 V mV/C A A
On Characteristics
VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 2.2 A VGS = 2.5 V, ID = 2.0 A rDS(on) Static Drain to Source On Resistance VGS = 1.8 V, ID = 1.8 A VGS = 1.5 V, ID = 1.5 A VGS = 4.5 V, ID = 2.2 A, TJ = 125 C gFS Forward Transconductance VDD = 5 V, ID = 2.2 A 0.4 0.7 -3 50 56 67 83 71 11 70 77 87 115 100 S m 1.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz 400 70 45 2.8 535 95 70 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 4.5 V, VDD = 10 V, ID = 2.2 A VDD = 10 V, ID = 2.2 A, VGS = 4.5 V, RGEN = 6 5.3 2.3 18 2.3 5.1 0.6 1.0 11 10 33 10 7.2 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.35 A (Note 2) 0.6 11 2.5 0.35 1.2 20 10 A V ns nC
IF = 2.2 A, di/dt = 100 A/s
Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design.
a. 300 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 333 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
2
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
6 5
ID, DRAIN CURRENT (A) VGS = 2.5 V VGS = 1.8 V VGS = 1.5 V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = 4.5 V
VGS = 3.5 V
2.5
VGS = 1.5 V
2.0
VGS = 1.8 V VGS = 3.5 V VGS = 2.5 V VGS = 4.5 V
4 3 2 1 0 0 0.2 0.4 0.6
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
1.5
1.0
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
0.8
1.0
0.5 1 2 3 4 5 6
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
180
SOURCE ON-RESISTANCE (m)
ID = 2.2 A VGS = 4.5 V
1.4 1.2 1.0 0.8
160 140 120 100 80 60 40 1.0 1.5 2.0 2.5
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO
ID = 1.1 A
TJ = 125 oC TJ = 25 oC
0.6 -75
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
Figure 4. On-Resistance vs Gate to Source Voltage
6
6 5
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
IS, REVERSE DRAIN CURRENT (A)
VGS = 0 V
VDS = 5 V
1
4 3 2
TJ = 125 oC TJ = 25 oC TJ = -55 oC
TJ = 125 oC
TJ = 25 oC
0.1
TJ = -55 oC
1 0 0.0
0.5
1.0
1.5
2.0
0.01 0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
3
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
5
VGS, GATE TO SOURCE VOLTAGE (V) ID = 2.2 A
1000
4 3
VDD = 10 V VDD = 15 V
CAPACITANCE (pF)
VDD = 5 V
Ciss
100
Coss
2 1
Crss
f = 1 MHz VGS = 0 V
0 0 1 2 3 4 5 6
Qg, GATE CHARGE (nC)
10 0.1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
Ig, GATE LEAKAGE CURRENT (A)
5
10
0.1 ms
ID, DRAIN CURRENT (A)
VGS = 0 V
10 10 10 10 10
3
1
THIS AREA IS LIMITED BY rDS(on)
1 ms 10 ms
1
TJ = 125 oC TJ = 25 oC
-1
0.1
SINGLE PULSE TJ = MAX RATED RJA = 333 oC/W TA = 25 oC
100 ms 10 s 1s DC
-3
0.01 0.01
-5
0.1
1
10
100
0
2
4
6
8
10
12
14
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
100
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Gate Leakage Current vs Gate to Source Voltage
VGS = 4.5 V
10
SINGLE PULSE RJA = 333 oC/W TA = 25 oC
1
0.1 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
4
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJA = 333 C/W
o
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.01
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
5
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
6
www.fairchildsemi.com
FDG410NZ Single N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM Green FPSTM QFET TinyBoostTM CROSSVOLTTM Green FPSTM e-SeriesTM QSTM TinyBuckTM GmaxTM CTLTM Quiet SeriesTM TinyLogic(R) GTOTM Current Transfer LogicTM RapidConfigureTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM ISOPLANARTM EfficentMaxTM TM TinyPWMTM MegaBuckTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * TinyWireTM TM* MICROCOUPLERTM SmartMaxTM TriFault DetectTM MicroFETTM SMART STARTTM TRUECURRENTTM* MicroPakTM SPM(R) (R) SerDesTM MillerDriveTM STEALTHTM Fairchild(R) MotionMaxTM SuperFETTM Fairchild Semiconductor(R) Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM OPTOLOGIC(R) SuperSOTTM-6 UHC(R) (R) (R) FACT SuperSOTTM-8 OPTOPLANAR Ultra FRFETTM (R) FAST(R) SupreMOSTM UniFETTM FastvCoreTM SyncFETTM VCXTM FETBenchTM Sync-LockTM VisualMaxTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B
7
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDG410NZ

	To Download FDG410NZ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .